W3E64M72S-XBX Datasheet, SDRAM, White Electronic

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W3E64M72S-XBX Features and benefits

Data rate = 200, 250, 266 and 333Mbs Package:
* 219 Plastic Ball Grid Array (PBGA), 25 x 32mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential c.

W3E64M72S-XBX Application

Laminate interposer for optimum TCE match GENERAL DESCRIPTION The 512MByte (4Gb) DDR SDRAM is a high-speed CMOS, dynami.

W3E64M72S-XBX Description

The 512MByte (4Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM. The 512MB DDR SDRAM uses a double data rate ar chi tec ture to achieve.

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